Test och verifiering av en ny inkapslingsmetod för SiC BJT och MOSFET
The use of silicon carbide (SiC) as a base material in power electronics has manyadvantages, including high breakdown voltage and excellent temperature endurance.However, the packaging of such electronics presents major challenges and there is aneed for packaging that can operate in higher temperature. The purpose of this thesishas been to develop a test method and verify the functionality of SiC powertransistors prototypes with a new packaging technique developed by Swerea IVF AB.It includes setting up an electrical test-bed for power and high temperature cyclingand analysis of the results. Even though test confirmed functionality after thepackaging process, (at room temperature) the performance seemed to have been reduced. This could be a result of the measurement setup and the packaging process.In higher temperature the transistors failed to operate longer than a couple ofminutes which showed the weaknesses in the design and the challenges with this typeof packaging.